OMNI SPECS Universal System for Surface Analysis and Sample Preparation

 The OMNIpotential SPECtrometer System OMNI SPECS is a modular system, which offers multi-technique capability incorporating the following range of facilities for analysis and preparation:

• Surface Analysis Chamber (XPS, ESCA, UPS, LEED, AES, ISS, Mass Spectroscopy, Depth Profiling)
• Microscopy Chamber (AFM, STM, LEEM, PEEM)
• Sample Preparation Chamber (MBE, PLD, CVD, ALD, PVD, OLED)
• Load Lock for Sample Introduction

  The system is fully equipped for electronic studies of materials under UHV conditions, including sample manipulation and preparation capabilities. The system consists of two UHV-chambers: a surface analysis and a load-lock chamber.

  XPS Surface Analysis System	Multi-Technique OMNI UHV System

   

  The specimen in the surface analysis chamber can be studied with the following surface analysis techniques:

• Monochromatic Photoelectron Spectroscopy M-XPS
• X-ray Photoelectron Spectroscopy XPS
• Ultraviolet Photoelectron Spectroscopy UPS
• Ion Surface Scattering ISS
• AFM/ Scanning Tunneling Microscopy STM (optional)
• Scanning Auger Microscopy SAM
• Auger Electron Spectroscopy AES
• Secondary Electron Microscopy SEM
• Secondary Ion Mass Spectroscopy SIMS (optional)
• Depth Profiling
  

The core of the system is the new Hemispherical Energy Analyzer EA 120 MCD with ultimate energy resolution in Electron Spectroscopy experiments. The EA 120 MCD analyzer is controlled by the powerful SPECTRA Data Acquisition and Control Software and Hardware System, including WINDOWS-based programme Presents for XPS Data Processing. 

VG-Scienta R3000 Electron Spectrometer

EA 120 MCD Hemispherical Energy Analyzer

The surface analysis chamber is further equipped with the

• new RMC 24 X-Ray Monochromator for Monochromized X-Ray Photoelectron Spectroscopy
• RS 40 B1 Dual-Anode High Performance X-Ray Source
• UV Source UVS 30 for Ultraviolet Photoelectron Spectroscopy
• Electron Source ES 40 C1 for Scanning Auger Microscopy
• IS 40 E1 Ion Source for Depth Profiling, SIMS, Sample Cleaning, ISS, SIMS
• The Flood Gun FG 40 A1 for Charge Compensation
• SED 5000 Secondary Electron Detector System for Scanning Electron Microscopy and Scanning Auger Microscopy
• SEM/SAM-Imaging Package for Scanning Electron Microscopy and Scanning Auger Microscopy
  
  The surface analysis chamber is pumped via a Booster pump with an ion getter pump (400 liters/sec) and an integrated titanium sublimation pump (1000 liter/sec) and an oil-free turbo molecular pump (pumping speed: 500 liters/sec). The chamber is connected to the preparation chamber by means of a gate valve.
  
  The Sample Preparation Chamber accommodates a standard sample holder. The system can be equipped with K-Cells/ Effusion Cells/Plasma Sources/E-Beam Evaporators/CVD/MOCVD/ALD/PLD/OLED and Sputter Equipment and Shutters. In-situ measurements of growth parameters can be performed by RHEED, Quartz Crystal Microbalance, Reflectometetry, RGA, Ellipsometry. All materials like Metals, Polymers, Organics, Compounds, Ceramics, Biometarials etc. can be deposited. The sample preparation chamber can be equipped with a gas station manifold for up to 10 gas injectors.
  

  The preparation chamber is pumped via a Booster pump with an ion getter pump (400 liters/sec) and an integrated titanium sublimation pump (1000 liter/sec) and an oil-free turbo molecular pump (pumping speed: 500 liters/sec).
  
  A load lock is connected to the preparation chamber by a manual gate valve. The load lock facilitates insertion and removal of sample holders via a respective quick access door.

  The vacuum system is completely oil-free; dry scroll and membrane pumps are utilized for chamber roughing. The background pressure in all chambers is measured with a Bayard-Alpert ionization gauge (nude). The load lock has gauging for intermediate pressure measurement. The complete system is mounted on a movable, adjustable aluminium rack. All control devices, such as pump supply units, pressure gauges, power supply units for analytical equipment etc. are stored in 19-inch electronic racks. For the bakeout cycle an aluminium case with double-wall-insulation can be mounted over the complete system. Controls on the respective power supply unit allow precise adjustment of bakeout temperatures. The analysis and sample treatment chambers, all associated equipment and cabling are bakeable to 150 deg Celsius. 

  Detailed Description of the OMNI SPECS Surface Analysis System:

  No.	Qty	Description
  1	1	Energy Analyzer Package EA 120 MCD for XPS, SSXPS, MXPS, ESCA, UPS, AES, ISS: True 180° Hemispherical Energy Analyzer EA 120 MCD, with 120 mm analyzer mean radius Fringe Field Correction Mu-Metal-Liner for analyzer lens and hemisphere housing Mounting flange DN100CF (6") 5-channel detector MCD 120 Lens Supply EAS 120 Spectrometer Controller EAC 120 Preamplifier PAH 120 High voltage supply HVS 120 Multiplier Controller SEMC 120. 6 different entrance slits (selectable, indexed) allow the choice of various spot sizes and solid angles of acceptance, Smallest Spot Size is 1000 µm in diameter Guaranteed Specifications are: 2.500.000 cps @ 1.0 eV (Ag 3d 5/2) for 300W X-Ray power MgKa (14-15kV) on clean silver. Set of installation, operation and maintenance manuals
  2	1	SPECTRA Software Package for Data Acquisition and Data Processing (XPS, UPS, AES, ISS): Auger and ESCA- database, spectral acquisition, element identification, depth profiling, integration, differentiation, smooth, curve fitting, background subtraction etc. Software runs under Windows XP, NT, and Vista Incl. an interface card PCI 725 and an interface card only for data processing. Additional WINDOWS-based programme Presents only for data processing. Imaging- and SIMS capabilities available on request SPECTRA MCD-Channel Data Acquisition Board and Multi-Channel Data Acquisition Software for Full Remote Control of the Power Supplies of the EA 120 MCD
  3	1	RMC 24 X-Ray Monochromator for Monochromized X-Ray Photoelectron Spectroscopy: Monochromator with Rowland Circle of 24" High-Power X-Ray Source with XY Manipulator Monochromatized Al K Light, FWHM < 0.3 eV 6" x 6" Toroidal Crystal Geometry for Bragg Reflection High Stability Crystal Holder, Easy Crystal Alignment 6" CF Mounting flange, Small Compact Design Differential Pumping with 50 liter/sec Ion Pump Bakeout: up to 250degC PS-RS 24B1, High Voltage Power Supply for X-ray Source: Power: 1000W Max Voltage: 15kV Full remote control by analog / digital interfaces Emission Regulator ER01 for X-ray Source: High accurate emission current: Regulated from 0 - 50mA Emission current accuracy: +/- 100 uA, Interlocks: Vacuum, Cooling water signal WK-RS 40B1, Isolation Unit with Flow Meter for X-Ray Source: Power Supply: 80 W. Min. Fow: 0.5 l/min, Max. Flow: 5 l/min. Max. Pressure: 6 bar. Connection: tube coupling diameter=8mm. Water interlock
  4	1	High Performance Dual-Anode X-Ray Source Package RS 40 B1 for X-Ray Photoelectron Spectroscopy: Al/Mg Anode, other anode coating materials on request Power: Mg/Al 350/500W Cross talk: <0.35% Mounting flange: (2 ¾") NW38CF Differential pumping port: 2.75"OD (NW38CF) Optional Z-retraction: 50, 75 or 100mm (also with tilt system) Bakeout: up to 250degC Water cooling: 3.5-5bar, 3.5 l/min RLTM 50 Z-Manipulator for X-Ray Source RS 40 B1: Mounted on 2.75" CF mounting flange, 2" travel range Heavy Duty Linear Translator Length compressed: 42 mm, Length extended: 92 mm PS-RS 40B1, High Voltage Power Supply for X-ray Source: Power: 750W Max Voltage: 15kV Full remote control by analog / digital interfaces Emission regulator ER01 for X-ray Source: High accurate emission current: Regulated from 0 - 50mA Emission current accuracy: +/- 100 uA, Interlocks: Vacuum, Cooling water signal WK-RS 40B1, Isolation Unit with Flow Meter for X-ray Source: Power Supply: 80 W. Min. Fow: 0.5 l/min, Max. Flow: 5 l/min. Max. Pressure: 6 bar. Connection: tube coupling diameter=8mm. Water interlock
  5	1	IS 40 E1 Ion Source package, for SIM, ISS, sample sputtering, scanning and depth profiling, using inert and reactive gasses, with the following specifications: IS 40 E1, differentially pumped small-spot ion-gun Primary energy 0.15 - 5 keV High current density: <5 mA/cm2 Large working distance: 20 - 100 mm Insertion depth: 63 mm Scan area: 10 x 10 mm Mounting flange: DN 38 CF (2 ¾ '') Ion current (small-spot operation): > 0.8 A at 5 keV and 125 m beam diameter Ion current (high current mode): > 8 A at 5 keV and 1000 m beam diameter With working distance of 23 mm Set of installation and instruction manuals, mounting kit Gas Inlet System for Ion Source IS 40 E1: Argon Pressure Container, Research Grade (99.999%) Pressure Regulator, Gas Line and Gas Valve High Precision UHV- Leak Valve (Sapphire-Sealed) Pumping System for Ion Source IS 40 E1: Differential Bypass Line to Main Vaccuum Chamber, incl. valve Power Supply IS-PS40E: Beam energy: 1eV - 5000eV Electron ionization current: 10uA - 10mA, Degas: controlled with internal timer Filament current: 3A - 5.5A Focus: High Voltage Power Supplies for 2 focusing electrodes 1V - 5000V Deflection: ± 650V for X and Y deflection plates
  6	1	ES 40 C1, Scanning Electron Source Package for Auger-Electron Spectroscopy, Scanning Auger Microscopy and Scanning Electron Microcopy consisting of: ES 40 C1 Electron Source on DN 35 CF (2 ¾ '') Flange: Energy Range: 0.02 to 5 keV Electron current: 100 A at 5keV and: 0.1 A at 20eV Stability better than +/- 0.3%/h Min. beam diameter < 100 m at 5 keV and 10 A beam current at flange-sample-dist. of 186 mm Beam rastering in X- and Y direction with +/ - 5 mm each ES-PS 40 C1, Controller for the Electron Source ES 40 C1: Electron energy 0-5keV/2mA, extractor voltage 0-200eV, focus voltage 0-5keV, filament current: 0-4A, emission current: 0-1mA Two regulation modes: both full emission current regulation for excellent stability and reliability, and filament current regulation. Internal/external mapping capability The Electron Source Controller can be completely remote controlled: Three 0-10V analog inputs for setting energy, emission current, focus, Four 0-10V analog outputs for monitoring energy, focus, emission current, filament current. Two TTL input signals for electron beam on/off and filament current on/off. Two analog inputs , range -10V to +10V, can be applied to control the scan area in X and Y direction Beam Raster Generator
  7	1	UV Source - UVS 30 Differentially Pumped, High Performance, Ultraviolet Source UV Source UVS 30 for Ultraviolet Photoelectron Spectroscopy: UHV Mounting Air cooled, UV-source, Water-Cooling NOT Required High Flux >8 x 1015 Photons sr-1 s-1 High intensity photocurrent between 15 nA .. 40 nA Stable output of adjustable ratio of Helium I and Helium II lines Easy operation / ignition / adjustment Differential pumping Port aligner for convenient beam positioning Mounting flange: 2.75"OD (NW35CF) Bakable up to 250° C Optional: leak valve / gas inlet system / pumping system / polarizer ES-PS 30, Controller for the UV Source UVS 30: Remote Control: 2 Analog Inputs, 2 Monitor Outputs, TTL Input Signal Regulated Constant voltage for Initial Ignition Regulated Constant Current Operational Mode Operating voltage: 0-1500 V, Operating Current: 0-125 mA, Ignition Voltage: 6500 V Controls for Voltage and Current and Push Button for Start 3 1/2 digital panel, two display modes (V or mA) LEDs for voltage / current / fan fail and HV fail 115/230 V, 200VA, 50-60 Hz Gas Inlet System for UV Source UVS 30: Helium Pressure Container, Research Grade (99.999%) Pressure Regulator, Gas Line and Gas Valve High Precision UHV- Leak Valve (Sapphire-Sealed) Pumping system for the UV Source: Turbomolecular pump, pumping speed is 50 l/s, mounted on DN63CF (4.5'') flange, with power supply and cables, bake out-device, Valve 4.5" CF between turbo pump and UV Source Dry membrane pump, including all supplies, Gauge
  8	1	SED 5000 Secondary Electron Detector System for Scanning Electron Microscopy and Scanning Auger Microscopy, consisting of: Secondary Electron Detector SED 5000 SED 5000 contains light guide, scintillator plate, hemispherical grid, photomultiplier tube, and high speed preamplifier Mounted on DN38CF (2 ¾'') flange With SED Control SEDC 5000 consisting of 10kV scintillator power supply, 1,5kV adjustable SE detector power supply, 300V grid power supply
  9	1	SEM/SAM-Imaging Package for Scanning Electron Microscopy and Scanning Auger Microscopy, with: SPECTRA Professional Data Acquisition and Processing System for SEM and SIM: PRESENTER Software for Image Acquisition, Image Manipulation and Spectroscopy for SEM/SAM SPECTRA Imaging PCI Board for Image Acquisition, Power Supply Control, and Deflection Control Software runs under Windows XP, NT, and Vista Image resolution from 100 x 100 pixel to 4000 x 4000 pixel Image zooming and shifting Image rate up to 25 picture/s depending on the resolution Programmable image rate to adapt line frequency to the deflection amplifiers speed Programmable pixel data accumulation for noise reduction at lower image rate Provides 4 data inputs: one analog input, two TTL pulse inputs and one MCD Input Image acquisition across an arbitrary aine Image manipulation such as false color, edge detection, filtering
  10	1	The Flood Gun FG 40 A1 for Charge Compensation: The FG 40A1 is a compact, easy to handle, reliable flood gun for charge neutralization of positively charged insulators or semiconductors. The flood gun enables operation in the energy range 0 - 500 eV for charge compensation in typical XPS/AES or SIMS experiments respectively. Flood Gun FG 40 A1: Energy range 0 - 500 eV Beam current: 0 - 100 µA Mounting flange 2.75" (NW40CF) Insertion depth: 140 mm Working distance 40 mm Maximum Bakeout Temperature: 250 °C Power Supply FG-PS40 A1: Selectable electron energy ranges (0 - 500 eV) Stabilized emission current 5m Connecting cable Dimensions: 19" (W) x 89 mm (H) 230/115 V, 60 VA, 50/60 Hz
  11	1	UHV System for XPS, ESCA, UPS, ISS, AES, SEM, SAM, LEEM/PEEM, AFM/STM, MBE/PLD/CVD/PVD: Experimental Chamber: Surface Analysis UHV chamber (100% mu-metal, with flanges for X-ray source, X-ray Monochromator, Electron Source, Ion Source, Electron Energy Analyzer, UV-Source, Mass Spectrometer, Secondary Electron Detector, Flood Gun, Manipulator, Sample Introduction System, Vacuum Pumping System, Windows, Reserve Flanges) Viewport DN63CF, Viewport DN40CF Sample Heating Station for Sample Holder Stage and High Precision Sample Manipulator: UHV Sample Heating Station for Sample Holder Stage Sample Heater for heating substrate to 800°C, UHV- Sample Manipulator with linear movements in X-, Y- and Z- direction, full 360 rotation, sample station Thermocouple (type C) for control of sample temperature, with heating power supply and PID-Controller Standard sample holder size: 1cm^2, or as specified Pumping system for the analysis chamber: Ion getter pump (pumping speed is 400 l/s) with integrated Titanium sublimation pump (pumping speed at 20°C is 1,000 l/s with liquid nitrogen cooling), power supply and controller with bakeable cables. Turbomolecular pump, pumping speed is 500 l/s, mounted on DN200CF (10'') flange, with power supply and cables, bake out-device, Valve 10" CF between turbo pump and chamber, pneumatic (Manufacturer: VAT) " Dry membrane pump, including all supplies Pressure Measurement for analysis chamber: Ion gauge with controller and bakeable cable (5m)
  12	1	UHV Preparation chamber for Materials Deposition and Sample Treatment: UHV Chamber (304 stainless steel) with flanges for: E-beam Evaporators, Effusion Cells, Plasma Source, Sputter Guns, PLD Equipment ALD/CVD Gas Injector System for up to 10 gases RHEED, Quartz Crystal Microbalance, Reflectometetry, RGA, Ellipsometry Sputter Ion Source for Sample Cleaning Viewports, Spare flanges: 2 x DN 35CF, 2 x DN 63CF Sample Heating Station for Sample Holder Stage and High Precision Sample Manipulator: UHV Sample Heating Station for Sample Holder Stage Sample Heater for heating substrate to 800°C, UHV- Sample Manipulator with linear movements in X-, Y- and Z- direction, full 360 rotation, sample station Thermocouple (type C) for control of sample temperature, with heating power supply and PID-Controller Standard sample holder size: 1cm^2, or as specified Pumping system for the preparation chamber: Ion getter pump (pumping speed is 400 l/s) with integrated Titanium sublimation pump (pumping speed at 20°C is 1,000 l/s with liquid nitrogen cooling), power supply and controller with bakeable cables. Turbomolecular pump, pumping speed is 500 l/s, mounted on DN200CF (10'') flange, with power supply and cables, bake out-device, Valve 10" CF between turbo pump and chamber, pneumatic (Manufacturer: VAT) " Dry membrane pump, including all supplies Pressure Measurement for preparation chamber: Ion gauge with controller and bakeable cable (5m)
  13	1	Load Lock Chamber: Load lock with quick access sample introduction flange. Viewport on DN63CF (4½ '') flange Pumping system for the load lock, consisting of: Turbomolecular pump, pumping speed is 50 l/s, mounted on DN63CF (4.5'') flange, with power supply and cables, bake out-device Dry scroll pump, including all supplies Cold Cathode Gauge with controller
  14	1	Sample Transfer: Sample transfer with magnetically coupled sample rod from load lock station to preparation chamber Sample transfer with magnetic sample rod from preparation chamber to surface analysis chamber Valve: 4.5" CF between load lock and the preparation chamber and between preparation chamber to surface analysis chamber, manually operated, with metal seals in the vacuum envelope (Manufacturer: VAT)
  15	1	System Set-up, Bake out and Power Distribution: Stainless steel frame movable and adjustable Pneumatic Vibration isolation system to isolate the UHV system from the environment, consisting of Newport air damper array. Flexible isolating bake out cover and rigid support framework, heaters, bake out Control Unit BOU 62 with timer for max. bake out time of 62 hours, bakeable cables. Power Control Unit PCU 62 19" rack with air cooling and electric sockets
  16	1	Personal Computer for XPS/SAM System: Pentium PC with at least 3 GHz, 1024 MB RAM 400 GB Hard Drive DVD, CD, DVD+RW Intelli-Mouse, advanced keyboard High-Resolution 22" ULTRA Flat Panel Display High-Precision LaserJet Printer Computer configuration can be modified on actual situation. The delivered computer corresponds to this or better performance!
  17	1	Installation and Training: Installation and training through SPECS service engineer at the customers' place. All expenses like accommodation and transportation costs are included.

  
  Drawings of the OMNI SPECS UHV System:
  
  Before starting production, the detailed configuration of the OMNI SPECS UHV System will be discussed with the customer. One complete set of drawings will be presented to the customer for approval.  After approval by customer, the Vendor will fabricate the Instrument in accordance with the approved drawings.  Drawings that are disapproved will be discussed and revisions mutually agreed to between the vendor and customer.

   Pre-delivery Assembly and Demonstration:
  
  The complete OMNI SPECS UHV System will be assembled and demonstrated at the Vendor’s facility.  The Vendor will operate OMNI SPECS UHV System and certify that all components operate and meet the specifications.  At least 2 weeks prior to the demonstration of the system the Vendor will contact customer to make arrangements for the customer to witness the demonstration.  Regardless of whether or not the customer chooses to witness the demonstration, the Vendor will operate the OMNI SPECS UHV System and provide to the customer written test results that demonstrates that all components operate as specified and the guaranteed vacuum specifications are fulfilled.

  INSTALLATION and CHECKOUT:

  The vendor will then ship and install all equipment to the customer’s facility. The vendor will demonstrate all specifications at the customer’s facility for final acceptance and give suitable training to the customer in consultation with the customer.

  Documentation: 

  Before starting production, the detailed configuration of OMNI SPECS UHV System and sample manipulation system will be discussed with the customer.

  1 complete set of drawings will be presented to the customer for approval.
  1 complete set of operating, installation and service manuals will be presented to the customer.

  The unit will be manufactured to an ISO 9002 manufacture quality standard or equivalent.

  Training:

  The vendor will provide sufficient training for two persons in the safe set-up, calibration, operation, and maintenance of the OMNI SPECS UHV System and associated software.  This training may be at the Customer’s facility and/or at the customer’s place. The vendor recommends an installation and training time of 5 business days, the training will occur within 60 days of delivery, coordinated between vendor and customer.

  Warranty: 

  The vendor will guarantee operation for a 12 months full warranty period on materials and labour, but not on consumables. A service contract can be arranged after one year has passed, although most prior customers are self sufficient and repair the system themselves as required. The system is low maintenance. Warranty does not cover misuse. Items for service under warranty must be returned to SPECS carriage-paid, with a declaration that they do not represent a chemical, biological or radiation hazard. Repairs not authorized by SPECS terminate warranty. 

  Terms of Acceptance:

  UHV in the surface analysis chamber                     = 5 x 10^-10 mbar
  UHV in the sample preparation chamber               = 5 x 10^-10 mbar
  UHV in the load-lock chamber                                 = 5 x 10^-8 mbar

After manufacturing and setup of the system the specified base pressures of the different sections of the instrument will be achieved after 48 hours bake out with an additional pumping period of 48 hours

Requirements for operation of the OMNI SPECS UHV System:

1. Ground load capacity > 500 kg/m₂
2. Electric power supply: 208 V / 50 A
3. Water supply: 20 l/min @5 bar
4. Cooling: customer provides N2 for venting  

Please download your Surface Analysis Systems Brochure

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