	Scientific

WAFER PROFILER CVP21 from WEP

The Wafer Profiler CVP21 is a handy tool to measure doping profiles in semiconductor layers by Electrochemical Capacitance Voltage Profiling (ECV Profiling, CV Profiling) in semiconductor research or production. This ECV Profiler (CV-Profiler, C-V Profiler) furthermore is a very good choice to analyze or develop strategies for Photo-Electrochemical Wet Etching (PEC Etching) of semiconductors.

CVP21 Supports the COMPLETE Spectrum of Materials:

Group IV semiconductors: Silicon (Si), Germanium (Ge), Silicon Carbide (SiC)
III-V Semiconductors: Gallium Arsenide (GaAs), Indium Phosphide (InP), Gallium Phosphide (GaP), ...
Ternary III-V alloys: Aluminum Gallium Arsenide (AlGaAs), Gallium Indium Phosphide (GaInP), Aluminium Indium Arsenide (AlInAs) ...
Quaternary III-V alloys as Aluminum Gallium Indium Phosphide (AlGaInP), ...
Nitrides, as Gallium Nitride (GaN), Aluminum Gallium Nitride (AlGaN), Indium Gallium Nitride (InGaN), Aluminum Indium Nitride (AlInN)
II-VI semiconductors: Zinc Oxide (ZnO), Cadmium Telluride (CdTe), Mercury Cadmium Telluride (HgCdTe, MCT)...
Exotics Semiconductors (please contact us for sample measurements)

CVP21 Supports the COMPLETE Sample Range:

Stacked layers are no problem (the material, the doping and the doping type may vary).
No Restrictions concerning the substrate (may be conductive or insulating).
Sample size: 4*2 mm² to complete 8" wafer size are standard (smaller samples on request).

CVP21 Supports the COMPLETE Resolution Range:

Concentration resolution < 1012 cm-3 to > 1021 cm-3 (*).
Depth resolution 1 nm to 100 µm (*).
(*) may depend on material type/ sample quality.

CVP 21 comes as a COMPLETE measurement system:

High Reliability system (special concern on electronics, mechanics, optics and fluid system).
Calibration-free system (Complete self calibrating electronic system - no needs for cable capacitance calibration).
Easy-to-use (Software optimized with full user management - easily used as well in production as in laboratory environment).
Wafer-Stepping (Complete wafer stepper is optionally available - to process several measurements on a wafer in full automation).
Camera-Control (The process is controlled on-line by a color camera - after each measurement camera data is available in film strip format).
Recipes (Measurement recipes are pre-defined and may easily modified by a user with higher priority).
Dry-In / Dry-Out: Auto-Load / Unload / Reload (The loading/ un-loading and re-loading of the electrochemical cell is automated and may be easily modified by user. The samples are processed dry-in / dry-out)

CVP21 as Table-Top Unit (Width: 60 cm, Depth: 80 cm)

CVP21 Installation Requirements:

Nitrogen or dry air with adjustable pressure 2..5 bar, tube with ID4/OD6mm (to automatically dry the sample after the measurement),
Exhaust, tube with ID 3/4" (to allow operation with bad smelling electrolytes, e. g. ammonium based electrolytes),
Vacuum of typically 0.2 bar, tube with ID4/OD6mm (to hold larger samples on the wafer hood), and
230V/110V (-15%/+10%), 50-60Hz, 500VA-1000VA

The Comparison List compares ECV Profiling to other Techniques: Hall, SIMS, and SRP (Sheet Resistance Profiling)

The Benefit List compares our CVP21 Instrument to Conventional ECV Equipment

Please Download your WAFER PROFILER CVP21 Broch u re