 |
|
 |
|||
|
|
|||||
WAFER PROFILER CVP21 from WEP
Electrochemical Capacitance Voltage Profiling (ECV Profiling) is a valuable
and handy tool for semiconductor analysis.
The following table compares its benefits to Hall, (Secondary Ion Mass Spectroscopy)
and SRP (Sheet Resistance Profiling):
| Application requirement |
Hall |
SIMS |
SRP |
ECV |
| Monitor the doping concentration |
|
|
|
|
| Monitor the concentration of electrically activated dopants |
|
|
|
|
| Monitor the doping type (n or p) |
|
|
|
|
| Monitor the crystalline quality of the sample |
|
|
|
|
| Easy sample preparation |
|
|
|
|
| Easy equipment preparation (no calibration or standard samples required) |
|
|
|
|
| Easy contact preparation |
|
|
|
|
| Substrate may be conductive |
|
|
|
|
| Thickness of the epi layer may be unknown |
|
|
|
|
| Depth Profile may be measured |
|
|
|
|
| Depth resolution in the 1nm range possible |
|
|
|
|
| Several layers may be resolved |
|
|
|
|
| A broad range of semiconductors may be measured |
|
|
|
|
| Concentrations below 1014 cm-3 may be measured *) |
|
|
|
|
| Wafer topography may be analyzed |
|
|
|
|
| Measurement without prior mechanical or lithographic preprocessing |
|
|
|
|
| Photo-Electro-Chemical (PEC) etching may be evaluated |
|
|
|
|
| The surface may be etched/ passivated on start of the measurement |
|
|
|
|
|
*) SIMS may measure lower concentrations for certain dopant types and semiconductor materials, but for dopants as important as Si in GaN it starts to fail already at a concentration range of below 1016 cm-3. |
===>>> The Wafer Profiler CVP21 is the superior solution for Electrochemical Capacitance Voltage Profiling!