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New Ångstrom-Probe:
Non-Destructive Measurement of Semiconductor Wafer Dopant Density
- Non-Destructive, Fast Determination of Spatial Density and Density Depth Profiles of the Dopants with Ultra-High Resolution
- Dopant Detection by Electron Induced X-Ray Emission Using Parallax's Patented LEXS X-Ray Spectrometer Technology
- Determination of Ultra-Low Dopant Concentrations in Angstrom-Thin Layered Structures and Diffusion Barrier Layers
- Highest Boron Detection Sensitivity of any X-Ray Spectrometer with New Collimation Optics, Optimized for Boron
- In-Situ Dopant Analysis with Existing Cluster Tool
- Advanced Charge Neutralization Plasma System