New RF Atom Sources from MANTIS Deposition

- Plasma Atom Source for Nitrogen, Oxygen, Hydrogen -

RF Atom Source for atomic oxygen and atomic nitrogen

 

Features:

• Neutral, atomic species have been shown to be highly beneficial in the growth of high-quality compound materials.   Molecular gases such as oxygen or nitrogen are many orders of magnitude less reactive than if dissociated into atomic form.  Consequently, oxide formation using molecular oxygen commonly requires highly elevated temperatures and/or extended oxidation periods, while molecular nitrogen shows negligible reactivity for most materials. Using dissociated species increases the reactivity by many orders of magnitude and therefore allows oxides or nitrides to be grown at low pressure and at reasonable substrate temperatures.  However, ionic species generated in plasma processes tend to be energetic, and will create point defects on impact with the growing film, rendering many films useless for their intended purpose. Atomic species, on the other hand, carry negligible kinetic energy and therefore allow rapid film growth without generating defects. 
• RF atom sources have been used with great success in many semiconductor film-growth applications, such as GaN, GaInNAs, ultra-thin Al2O3, high-K dielectrics and are being employed in a range of other applications such as data storage, catalytic films, and surface cleaning with atomic hydrogen.
• MANTIS MATS-Series RF atom sources are designed for use in the most demanding applications. The coaxial RF coil is optimized for power transfer to the plasma zone, with full coupling along the entire length of the coil, ensuring even dissociation and maximum atomic flux. The support components are constructed in such a manner as to avoid RF coupling from the coil, hence further minimizing power losses. These components are also far removed from the coil, thus avoiding the possibility of accidental contact with the RF coil as is more common in other designs. Most important, the source is extremely well cooled, thus minimising film contamination from outgassing at hot metal surfaces.
• The discharge zone is manufactured from high-quality materials ensuring minimal contamination of the beam. The source incorporates a zero-ion current configuration as standard and can be fitted with a unique beam-thermaliser to reduce the energy of the small fraction of energetic neutrals which commonly emerge from all plasma-based atom sources.
• The end-user can define the optimum gas flow by selecting from a range of different end-plates. These plates can be further customized to give maximum uniformity for a given sample size, distance and angle to the source

 

New Automation Accessoires for RF Plasma Source:

• Plasma emission monitoring. The sources can be equipped with an optical monitoring system to give a precise measurement of the intensity of the plasma emission lines, and hence a relative measure of the atomic flux emerging from the source.
• Plasma Control. In Conjunction with emission monitoring, this option allows control of the RF power to maintain a constant emission intensity and hence a constant atomic flux.

• Automatic Tuning. The sources use a manual tuning unit as standard to match the impedance of the source to the RF power supply. This can be replaced with an automatic tuning unit to automate the process both at start-up and during operation.

 

Atomic Oxygen and Atomic Nitrogen	MATS20 RF Atom Source

Typical Applications:

Nitrogen

• Nitriding: GaN, AlN, InN, SiN
• Doping: ZnSe
• Alloys: GaAlAsN
• Cleaning
• Growth enhancement / surfactant In-situ etching

  Oxygen

• Oxide growth: HTc superconductors, optical coatings, dielectrics, ceramic growth, Al2O3
• Reactive sputtering, laser ablation
• Oxygen cleaning, Oxidation kinetics
• Post growth oxidation/low temperature: SiO2

  
  Hydrogen

• Cleaning
• Growth enhancement / surfactant
  
  Chlorine
  
  
• In-situ etching

  Methane

• SiC
  
  
  SPECIFICATIONS:
  
  

Model	MATS20	MATS30	MATS60	MATS175
Max. Power	400 Watts	600 Watts	600 Watts	1000 Watts
Max. Gas Flow*	20 sccm	20 sccm	30 sccm	50 sccm
Min. Fas Flow *	0.01 sccm	0.01 sccm	0.01 sccm	0.1 sccm
Beam Diameter (at source exit)	20mm	30 mm	60 mm	175 mm
Mounting Flange	NW35CF (2 3/4")	NW63CF (4 ½ “)	NW100CF (6”)	NW200CF (10”)
In-vacuum Diameter	34mm	57mm	98mm	196mm
In-vacuum Length** (Standard)	290mm	290 mm	290 mm	310 mm
Cooling	Water	Water	Water	Water
Aperture/Discharge Tube Material***	Quartz Alumina PBN	Quartz Alumina PBN	Quartz PBN	Quartz PBN

* The gas flow range can be selected by the user by changing the front aperture plate.
** A different length may be specified a the time of purchase. Please contact Mantis for Minimum/maximum lengths for each model.
*** Please contact Mantis for material recommendations for use with different gases

 

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C4 Scientific Systems 754 Leona Ln Mountain View, California 94040 Phone: (650) 961-6620 Fax: (650) 961-8591 support@c4scientific.com