Scientific

New ELMITEC Aberration Corrected LEEM / PEEM

The ELMITEC AC LEEM/PEEM features an advanced electron optical Aberration Corrected Low Energy Electron Microscopy System with unsurpassed 3 nm resolution in dynamic LEEM Microscopy Experiments.

The ELMITEC AC LEEM/PEEM is integrated into the UHV LEEM sample analysis chamber with facilities for sample preparation and in-situ high temperature sample processing. The LaB6 Emission Source and a system of magnetic lenses and steering coils guarantee superior image and diffraction capabilities with the ELMITEC AC LEEM/PEEM.

Videos of ultimate atomic performance can be made visible through observing nanometer scale processes on surfaces in real-time.

ELMITEC AC LEEM/PEEM Performance:

Imaging modes: PhotoElectron Emission Microscopy; Mirror Electron Microscopy; LEEM bright field/dark field imaging; Phase contrast; Reflectivity contrast; LEED; Microdiffraction; up to four 'simultaneous' bright field/dark field imaging windows, at two image frames per second.

• Calculated resolution <3 nm at 8 times more intensity
• Easy checking of image enhancement
• Fast switching between corrected and non-corrected modes
• Upgrade possible for all of our magnetic LEEM and PEEM systems

First results presented during the 5th International Conference on LEEM/PEEM October 2006:

LEEM Pb layer on Mo(100) surface, FOV: 3 µm	AC LEEM Pb layer on Mo(100) surface, FOV: 3 µm	LEEM Pb layer on Mo(100) surface, FOV: 1 µm	AC LEEM Pb layer on Mo(100) surface, FOV: 1µm